职称：研究员、助理教授
导师类别：博士生导师
研究所：碳基电子学研究中心
招生专业：物理电子学
研究领域：集成电路、芯片设计
课题组介绍网站：https://crm-prcc.github.io/
电子邮件：crm[at]pku.edu.cn
教育背景：
2012/09 - 2017/07 博士，清华大学工程物理系
2014/11 - 2015/11 联合培养博士生，美国范德堡大学电子工程系
2008/08 - 2012/07 本科，清华大学工程物理系
工作履历/科研教育经历：
工作经历| Work Experience
2023/07 -至今 beat365亚洲体育在线官网，助理教授
2019/04 - 2023/06 欧洲微电子研究中心（IMEC），长聘研究员
2017/09 - 2019/03 法国国家科学院LIRMM实验室，博士后
主要研究领域：碳纳米管集成电路、三维集成电路、基于先进半导体工艺的DTCO/STCO以及大规模数字芯片设计
学术兼职：Nature Electronics、IEEE TED、IEEE VLSIs等期刊审稿人，VLSI 2021/2023大会workshop主席
代表性学术论著：
[J10] R. Chen*. “Pushing carbon nanotube circuits below the 10-nm node,”Nature Electronics, 473–474 (2023). https://doi.org/10.1038/s41928-023-00986-0
[J09] R. Chen*, et al., “Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances—Part I: Pristine MWCNT,”IEEE Transactions on Electron Devices, Vol. 65, No. 11, pp. 4955-4962, Nov. 2018.
[J08] R. Chen*, et al., “Variability Study of MWCNT Local Interconnects Considering Defects and Contact Resistances—Part II: Impact of Charge Transfer Doping,”IEEE Transactions on Electron Devices, Vol. 65, No. 11, pp. 4963-4970, Nov. 2018.
[J07] R. Chen*, et al., “Carbon Nanotube SRAM in 5 nm Technology Node Design, Optimization and Performance Evaluation-Part I: CNFET transistor optimization,”IEEE Transactions on VLSI Systems, Vol. 30, No. 4, pp. 432-439, Feb. 2022; DOI: 10.1109/TVLSI.2022.3146125
[J06] R. Chen*, et al., “Carbon Nanotube SRAM in 5 nm Technology Node Design, Optimization and Performance Evaluation-Part II: CNT interconnect optimization,”IEEE Transactions on VLSI Systems, Vol. 30, No. 4, pp. 440-448, Feb. 2022; DOI: 10.1109/TVLSI.2022.3146064
[J05] R. Chen*, et al., “Effects of total-ionizing-dose irradiation on SEU- and SET-induced soft errors in bulk 40-nm sequential circuits,”IEEE Transactions on Nuclear Science, Vol. 64, No. 1, pp. 471-476, January 2017.
[J04] R. Chen*, et al., “Effects of temperature and supply voltage on SEU- and SET-induced single-event errors in bulk 40-nm sequential circuits,”IEEE Transactions on Nuclear Science, Vol. 64, No. 8, pp. 2122-2128, Aug. 2017.
[J03] R. Chen*, et al., “Impact of Temporal Masking of Flip-Flop Upsets on Soft Error Rates of Sequential Circuits,”IEEE Transactions on Nuclear Science, Vol. 64, No. 8, pp. 2098-2106, Aug. 2017.
[J02] R. Chen*, et al., “Single-event multiple transients in conventional and guard-ring hardened inverter chains under pulsed-laser and heavy ion irradiation,”IEEE Transactions on Nuclear Science, Vol. 64, No. 9, pp. 2511-2518, Sep. 2017.
[J01] R. Chen*, et al., “Analysis of Temporal Masking Effects in Master and Slave Type Flip-Flop SEUs and Related Applications,”IEEE Transactions on Nuclear Science, Vol. 65, No. 8, pp. 1823-1829, Aug. 2018.
会议文章| Conference Papers
[C5] R. Chen, et al., “Invited Paper: Opportunities of Chip Power Integrity and Performance Improvement through Wafer Backside (BS) Connection,” 2022ACM/IEEE International Workshop on System-Level Interconnect Pathfinding (SLIP). (邀请报告)
[C4] R. Chen, et al., “Power, Performance, Area and Thermal Analysis of 2D and 3D ICs at A14 Node Designed with Back-side Power Delivery Network,”2022 IEDM. (接受采访：IEEE Spectrum: https://spectrum.ieee.org/interconnect-back-side-power)
[C3] R. Chen, et al., “Design and Optimization of SRAM Macro and Logic Using Backside Interconnects at 2nm node,”2021 IEDM. (国际电子器件大会，工作受到imec亮点介绍，受到欧洲半导体媒体eeNews, SILICON semiconductor等重点报道)
[C2] R. Chen, et al., “3D-optimized SRAM Macro Design and Application to Memory-on-Logic 3D-IC at Advanced Nodes,”2020 IEDM. (国际电子器件大会)
[C1] R. Chen, et al., “Backside PDN and 2.5D MIMCAP to Double Boost 2D and 3D ICs IR-Drop beyond 2nm Node,”2022 Symposium on VLSI Technology and Circuits, June, Hawaii, USA. (国际超大规模集成电路会议，论文已经接受，论文进入大会Technology Focus Session(总共9篇)，另有一篇共同作者论文进入大会Highlight Session(总共5篇))
著作|Books/Chapters
《纳米体硅CMOS工艺逻辑电路单粒子效应研究》，清华大学出版社，2020.11，陈荣梅 著
主要科研项目：欧盟玛丽居里个人自主项目：三维集成电路设计（主持人）
